Toshiba & BASiC Partner on Next-Gen Power Modules

Toshiba Electronic Devices & Storage Corporation and BASiC Semiconductor Co., Ltd. have entered into a memorandum of understanding (MoU) to establish a strategic partnership in power module products.

The partnership will bring together Toshiba's high-reliability silicon carbide (SiC) and insulated gate bipolar transistors (IGBT) technologies with BASiC's high-performance power module architecture, focusing on the rapidly expanding automotive and industrial markets.

The collaboration will be aimed at providing efficient, high-reliability power solutions for use in electric vehicles, solar power generation, and energy storage. Toshiba's SiC MOSFETs are known for low on-resistance and reliability, while its IGBTs have a proven track record in high-current applications.

BASiC, a market leader in SiC power devices, has module development expertise up to automotive standards.

Key highlights:

• Toshiba and BASiC sign MoU to collaborate on high-performance power module products for automotive and industrial markets
• Partnership combines Toshiba’s SiC and IGBT technologies with BASiC’s advanced module architecture to deliver efficient, reliable solutions for EVs, solar, and energy storage
• Joint showcase planned at PCIM Asia Shanghai 2025, highlighting next-gen power modules supporting global sustainability goals

"The strategic partnership with BASiC enhances our capacity to deliver innovative, green products that enhance energy efficiency and contribute to a sustainable society. With this collaboration, we can speed up the global rollout of next-generation power modules." added a Toshiba Electronic Devices & Storage spokesperson.

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BASiC highlighted the international importance of the partnership. "By integrating Toshiba's established semiconductor technologies with our high-reliability modules, we will develop highly competitive products to address the changing requirements of customers in electric mobility and renewable energy," one BASiC executive said.